fast recovery diodes rf1001t2d ? applications ? dimensions (unit : mm) ? structure general rectification ? features 1) cathode common type. (to-220) 2) ultra low v f 3) very fast recovery 4) low switching loss ? construction silicon epitaxial planar ? absolute maximum ratings (ta=25? c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c ? electrical characteristic (ta=25? c) symbol min. typ. max. unit v f - 0.87 0.93 v i f =5a reverse current i r - 0.01 10 a v r =200v reverse recovery time trr - 15 30 ns i f =0.5a, i r =1a, irr=0.25*i r thermal impedance ? j-c - - 2.5 ? c/w junction to case conditions (*1)business frequencies, rating of r-load, tc=126 ? c. 1/2 io per diode parameter 80 junction temperature 150 storage temoerature ? 55 to ? 150 forward voltage parameter limits reverse voltage (repetitive peak) 200 reverse voltage (dc) 200 average rectified forward current (*1) 10 forward current surge peak (60hz/1cyc) (1) (2) (3) rohm : to220fn manufacture date 1.2 1.3 0.8 (1) (2) (3) 10.00.3 0.1 5.0 0.2 8.00.2 12.00.2 2.80.2 0.1 4.50.3 0.1 0.70.1 0.05 2.60.5 13.5min 8.0 15.00.4 0.2 1/3 2011.05 - rev.d data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf1001t2d ? electrical characteristics curves ? j-c 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 900 100 0 110 0 120 0 ta=75 ? c ta=125 ? c ta=150 ? c ta=25 ? c ta=-25 ? c 0.1 1 10 100 1000 10000 0 50 100 150 200 ta=150 ? c ta=-25 ? c ta=75 ? c ta=125 ? c ta=25 ? c 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 0 10 20 30 40 50 60 70 80 90 100 840 850 860 870 880 890 0 5 10 15 20 25 30 ave:14.5ns ta=25 ? c i f =0.5a i r =1a irr=0.25*i r n=10pcs 1 10 100 1000 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 5 10 15 20 0 5 10 15 20 d=1/2 dc sin( =180) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =5a 300us time mounted on epoxy board 10 100 1000 110100 8.3ms ifsm 1cyc forward voltage:v f (mv) v f -i f characteristics forward current:i f (a) reverse current:i r (na) reverse voltage:v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( ? c/w) forward power dissipation:pf(w) average rectified forward current:io(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 150 155 160 165 170 175 180 185 190 195 200 ave:174.9pf ta=25 ? c f=1mhz v r =0v n=10pcs ta=25 ? c v r =200v n=30pcs ave:10.7na ta=25 ? c i f =5a n=30pcs ave:857.4mv 0 50 100 150 200 250 300 ave:167.0a i fsm dispersion map 2/3 2011.05 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf1001t2d 0 5 10 15 20 25 30 0 25 50 75 100 125 150 dc d=1/2 sin( ? =180) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 d=1/2 dc sin( ? =180) ambient temperature:ta( ? c) derating curve"(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ? c) derating curve"(io-tc) t tj=150 ? c d=t/t t v r io v r =100v 0 a 0v t tj=150 ? c d=t/t t v r io 0a 0v 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? no break at 30kv electrostatic discharge test esd(kv) esd dispersion map v r =100v 3/3 2011.05 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
|
